2SC5824 transistor 1/3 power transistor (60v, 3a) 2SC5824 ! ! ! ! features 1) high speed switching. (tf : typ. : 30ns at i c = 3a) 2) low saturation voltage, typically (typ. : 200mv at i c = 2a, i b = 200ma) 3) strong discharge power for inductive load and capacitance load. 4) complements the 2sa2071. ! applications ! ! ! ! external dimensions (units : mm) each lead has same dimensions abbreviated symbol : up mpt3 1.5 0.4 1.5 0.4 1.6 0.5 3.0 0.4 1.5 (3) 4.5 (1) (2) 0.5 4.0 2.5 1.0 (1)base(gate) (2)collector(drain) (3)emitter(sourse) npn silicon epitaxial planar transistor ! ! ! ! structure low frequency amplifier high speed switching ! ! ! ! packaging specifications taping 2SC5824 type t100 1000 package basic ordering unit (pieces) code ! ! ! ! absolute maximum ratings (ta=25 c) parameter v v v a mw ? 1 pw = 100ms ? 2 each terminal mounted on a recommended land. ? 3 mounted on a 40x40x0.7(mm) ceramic substrate ? 2 ? 1 c a c v cbo v ceo i c p c tj v ebo i cp tstg symbol 60 60 6 3 6 500 w ? 3 p c 2.0 150 ? 55~ + 150 limits unit collector-base voltage collector-emitter voltage emitter-base voltage collector current power dissipation junction temperature range of storage temperature
2SC5824 transistor 2/3 ! ! ! ! electrical characteristics (ta=25 c) parameter symbol bv ebo i cbo i ebo v ce(sat) ft h fe c ob t on min. 6 ? ? ? 120 ? ? ? ? ? 200 ?? 20 50 ? 1.0 1.0 ? 200 500 390 ? ? ? i e = 100 a v ce = 2v, i c = 100ma v cb = 40v v eb = 4v i c = 2a, i b = 200ma i c = 3a, i b1 = 300ma i b2 = ? 300ma v cc 25v v ce = 10v, i e = ? 100ma, f = 10mhz v cb = 10v, i e = 0ma, f = 1mhz v a a mhz mv pf ns t stg ? 150 ? ns tf ? 30 ? ns typ. max. unit conditions bv ceo 60 ?? v i c = 1ma collector ? emitter breakdown voltage collector cut-off current dc current gain transition frequency collector output capacitance turn-on time storage time fall time emitter cut-off current collector ? emitter staturation voltage bv cbo 60 ?? i c = 100 a v collector ? base breakdown voltage emitter ? base breakdown voltage ? 2 ? 1 ? 1 ? 1 non repetitive pulse ? 2 see switching charactaristics measurement circuits ! ! ! ! h fe rank qr 120-270 180-390 ! ! ! ! electrical characteristic curves fig.1 safe operating area collector emitter voltage : v ce (v) collector current : i c (a) single non repoetitive pulse dc 1ms 10ms 110 0.1 100 10 1 0.1 0.01 100ms fig.2 switching time 1 0.01 0.1 10 1000 100 10 collector current : i c (a) switching time (ns) ta = 25 c v cc = 25v i c /i b = 10/1 tstg tf ton fig.3 dc current gain vs. collector current collector current : i c (a) dc current gain : h fe 0.001 0.01 0.1 10 1 1 10 100 1000 ta = 125 c ta = 100 c ta = 25 c ta = ? 40 c v ce = 2v 0.001 0.01 0.1 10 1 1 10 100 1000 collector current : i c (a) dc current gain : h fe v ce = 5v v ce = 3v v ce = 2v fig.4 dc current gain vs. collector current ta = 25 c 0.001 0.01 0.1 0.01 0.1 1 10 collector saturation voltage : v ce (sat )(v) collector current : i c (a) 10 1 fig.5 collector-emitter saturation voltage vs. collector current i c /i b = 10/1 ta = 125 c ta = 100 c ta = 25 c ta = ? 40 c 0.001 0.1 0.01 10 1 0.01 0.1 1 10 collector current : i c ( a) collector saturation voltage : v ce ( sat)(v) fig.6 collector-emitter saturation voltage vs. collector current i c /i b = 10/1 i c /i b = 20/1 ta = 25 c
2SC5824 transistor 3/3 collector current : i c (a) base emitter saturation voltage : v be (sat ) (v) fig.7 base-emitter saturation voltage vs. collector current 0.001 0.01 0.1 10 1 10 1 0.1 ta = 100 c ta = 125 c i c /i b = 10/1 ta = 25 c ta = ? 40 c 0.01 0.1 10 1 collector current : i c (a) base to emitter voltage : v be (v) 0 0.5 1 1.5 2 fig.8 ground emitter propagation characteristics ta = 100 c ta = 125 c ta = 25 c ta = ? 40 c v ce = 2v 1000 transition frequency : f t (mhz) emitter current : i e (a ) ? 10 ? 1 ? 0.1 ? 0.01 ? 0.001 100 10 1 fig.9 transition frequency ta = 25 c v ce = 10v 100 collector output capacitance : c ob ( pf) collector to base voltage : v cb ( v) 100 10 1 0.1 10 1 fig.10 collector output capacitance ta = 25 c f = 1mhz ! ! ! ! switching characteristics measurement circuits collector current waveform base current waveform i b1 i b2 v in p w i c r l =8.3 ? v cc 25v p w 50 s duty cycle 1% i b1 90% 10% i b2 i c ton tstg tf
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